• DocumentCode
    1216127
  • Title

    On the Decomposition of Silane in Plasma Deposition Reactors

  • Author

    DeJoseph, C.A., Jr. ; Haaland, P.d. ; Garscadden, A.

  • Volume
    14
  • Issue
    2
  • fYear
    1986
  • fDate
    4/1/1986 12:00:00 AM
  • Firstpage
    165
  • Lastpage
    172
  • Abstract
    In a low-pressure discharge, plasma-enhanced decomposition of silane proceeds by various channels including electron-impact, ion- and radical-induced, and heterogeneous reactions. The results of several experiments are presented to clarify the relative importance of the processes. The conclusions of these studies and associated analysis are that the dominant processes are strongly influenced by the gas residence time, the power density input, and the electronegative characteristics of the silane discharge.
  • Keywords
    Atomic layer deposition; Electrons; Hydrogen; Inductors; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Radio frequency; Semiconductor films;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/TPS.1986.4316519
  • Filename
    4316519