Measurement and modeling of radiation response of multilayer BESOI buried insulators

The time- and temperature-dependent radiation responses of multilayer bond-and-etch buried insulators were measured with the use of a fast capacitance-voltage technique after short-pulse irradiation. The multilayer insulators were fabricated with various combinations of SiO/sub 2/, silicon nitride, nitrided SiO/sub 2/, and reoxidized nitrided SiO/sub 2/ layers. The charge response results were analyzed together with X-ray-induced photocurrent results with simple charge-buildup models to determine the charge trapping characteristics of the complex structures. To a first approximation, these responses were predictable from the known general trapping characteristics of the component layers; however, the detailed results showed substantial charge-trapping variations with processing and indicated that bonding or fabricating one insulator material on another can alter the characteristics of either. Charge trapping in the bulk and at the interfaces of the SiO/sub 2/ layers was particularly sensitive to these process variations.<>