Title :
A new compact temperature-compensated CMOS current reference
Author :
Fiori, Franco ; Crovetti, Paolo Stefano
Author_Institution :
Dipt. di Elettronica, Politecnico di Torino, Italy
Abstract :
This paper describes a new circuit integrated on silicon, which generates temperature-independent bias currents. Such a circuit is firstly employed to obtain a current reference with first-order temperature compensation, then it is modified to obtain second-order temperature compensation. The operation principle of the new circuits is described and the relationships between design and technology process parameters are derived. These circuits have been designed by a 0.35 μm BiCMOS technology process and the thermal drift of the reference current has been evaluated by computer simulations. They show good thermal performance and in particular, the new second-order temperature-compensated current reference has a mean temperature drift of only 28 ppm/°C in the temperature range between -30°C and 100°C.
Keywords :
BiCMOS analogue integrated circuits; compensation; integrated circuit design; reference circuits; -30 to 100 C; 0.35 micron; BiCMOS technology process; CMOS current reference; MOS integrated circuits; analog integrated circuits; curvature compensation; first-order temperature compensation; second-order temperature compensation; temperature drift; temperature-independent bias currents; thermal drift; CMOS process; CMOS technology; Circuit topology; Computer simulation; MOS devices; MOSFETs; Mirrors; Silicon; Temperature distribution; Threshold voltage; Analog integrated circuits; MOS integrated circuits; current reference; curvature compensation; temperature compensation; temperature drift;
Journal_Title :
Circuits and Systems II: Express Briefs, IEEE Transactions on
DOI :
10.1109/TCSII.2005.852529
