Nonradiative recombination centers in GaAsN grown by chemical beam epitaxy

Author

Bouzazi, Boussairi ; Kojima, Nobuhiko ; Ohshita, Yoshio ; Yamaguchi, Masaki

Author_Institution

Toyota Technol. Inst., Nagoya, Japan

fYear

2014

fDate

8-13 June 2014

Firstpage

1132

Lastpage

1134

Abstract

Double carrier pulse deep level transient spectroscopy was deployed to identify and characterize the recombination centers in GaAsN grown by CBE. Six electron traps, E1 to E6, with average energy depths of 0.035, 0.125, 0.160, 0.365, 0.505, and 0.710 eV, respectively below the bottom edge of the conduction band minimum were observed. The DLTS peak heights of E2 and E4 were found to decrease with simultaneous injection of majority and minority carriers in the space charge region. This result is explained by the recombination of electrons and holes via E2 and E4 centers. The recombination processes were confirmed to be nonradiative and the possible origins of these two defects were expected to be related to the N-atom.

Keywords

III-V semiconductors; chemical beam epitaxial growth; conduction bands; deep level transient spectroscopy; electron traps; electron-hole recombination; gallium arsenide; minority carriers; semiconductor growth; space charge; DLTS peak heights; GaAsN; GaAsN growth; bottom edge; chemical beam epitaxy; conduction band minimum; double carrier pulse deep level transient spectroscopy; electron traps; majority carriers; minority carriers; nonradiative recombination centers; space charge region; Abstracts; Artificial intelligence; Atomic measurements; Capacitance; Electric variables measurement; Gallium arsenide; Space charge; CBE; DLTS; GaAsN; recombination centers;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th

Conference_Location

Denver, CO

Type

conf

DOI

10.1109/PVSC.2014.6925115

Filename

6925115