Total dose effects on negative voltage regulator

Author

Beaucour, J. ; Carrière, T. ; Gach, A. ; Laxague, D.

Author_Institution

Matra Marconi Space, Villacoublay, France

Volume

41

Issue

6

fYear

1994

Firstpage

2420

Lastpage

2426

Abstract

Functional failure at low dose level (4 Krad(Si)) on voltage regulators (LM137) from different manufacturers are analysed. Dose rate effects on parts hardness are evaluated, showing that lowering the dose rate degrade more the IC´s in the range 55 rad(Si)/s-0.8 rad(Si)/s. A failure mechanism is proposed, mainly based on circuit analysis, voltage contrast measurements, local irradiation and local electrical measurements with probe station. A SPICE simulation was performed, providing quantitative informations on the degradation. In the light of such a failure analysis and dose rate effects, practical implications on radiation assurance are discussed.<>

Keywords

SPICE; bipolar analogue integrated circuits; circuit analysis computing; failure analysis; integrated circuit reliability; radiation effects; radiation hardening (electronics); voltage regulators; 4E3 rad; LM137; SPICE simulation; bipolar linear IC; circuit analysis; failure analysis; failure mechanism; functional failure; local electrical measurements; local irradiation; low dose level; negative voltage regulator; radiation assurance; total dose effects; voltage contrast measurements; Circuit analysis; Circuit simulation; Degradation; Electric variables measurement; Failure analysis; Manufacturing; Probes; Regulators; SPICE; Voltage measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340597

Filename

340597