Total ionizing dose effects on high resolution (12-/14-bit) analog-to-digital converters

Author

Lee, C.I. ; Rax, B.G. ; Johnston, A.H.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2459

Lastpage

2466

Abstract

This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly important for high-accuracy converters. Rebound effects in the thick-oxide MOS devices cause these responses to be different at low and high dose rates, which is a major concern for space applications.<>

Keywords

BiCMOS integrated circuits; analogue-digital conversion; failure analysis; integrated circuit noise; integrated circuit reliability; integrated circuit testing; radiation effects; 12 bit; 14 bit; A/D converters; SNR degradation; analog-to-digital converters; high resolution ADC; high-accuracy converters; rebound effects; signal-to-noise ratio; space applications; thick-oxide MOS devices; total dose radiation test; total ionizing dose effects; Analog-digital conversion; BiCMOS integrated circuits; CMOS process; Circuit testing; Laboratories; Noise reduction; Propulsion; Space technology; Transfer functions; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340602

Filename

340602