Title :
Total ionizing dose effects on high resolution (12-/14-bit) analog-to-digital converters
Author :
Lee, C.I. ; Rax, B.G. ; Johnston, A.H.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
Abstract :
This paper reports total dose radiation test results for high resolution 12-/14-bit A/D converters. Small changes in internal components can cause these devices to fail their specifications at relatively low total dose levels. Degradation of signal-to-noise ratio becomes increasingly important for high-accuracy converters. Rebound effects in the thick-oxide MOS devices cause these responses to be different at low and high dose rates, which is a major concern for space applications.<>
Keywords :
BiCMOS integrated circuits; analogue-digital conversion; failure analysis; integrated circuit noise; integrated circuit reliability; integrated circuit testing; radiation effects; 12 bit; 14 bit; A/D converters; SNR degradation; analog-to-digital converters; high resolution ADC; high-accuracy converters; rebound effects; signal-to-noise ratio; space applications; thick-oxide MOS devices; total dose radiation test; total ionizing dose effects; Analog-digital conversion; BiCMOS integrated circuits; CMOS process; Circuit testing; Laboratories; Noise reduction; Propulsion; Space technology; Transfer functions; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
