Growth of layered (InxGa1−x)2Se3 buffer material for GaAs on Si system

We propose novel buffer layers consisting of the layered defect zincblende (In_xGa_1-x)₂Se₃ compounds for the GaAs on Si(111) system. The layered structured materials are suitable for lattice mismatch and thermal expansion mismatch buffer layers. However, it is necessary to grow α-type (In_xGa_1-x)₂Se₃ preferentially for use of the buffer layer. In this study, we investigated In₂Se₃ growth on GaAs(111) just and vicinal substrates by MBE and characterized its crystal structure type and the lattice parameters by XRD and Raman spectroscopy. The inclusion of other InxSey can be avoided at the growth temperature above 450°C and use of the vicinal substrates. The vicinal substrates are effective in the preferential growth of α-type In₂Se₃. The lattice parameters of MBE-grown α-In₂Se₃ is determined to a=4.04 A and c=9.40n A in hexagonal lattice.