Dependence of total dose response of bipolar linear microcircuits on applied dose rate

Author

McClure, S. ; Pease, R.L. ; Will, W. ; Perry, G.

Author_Institution

Hughes Space & Commun.t Co., Los Angeles, CA, USA

Volume

41

Issue

6

fYear

1994

Firstpage

2544

Lastpage

2549

Abstract

The effect of dose rate on the total dose radiation hardness of three commercial bipolar linear microcircuits is investigated. Total dose tests of linear bipolar microcircuits show larger degradation at 0.167 rad/s than at 90 rad/s even after the high dose rate test is followed by a room temperature plus a 100/spl deg/C anneal. No systematic correlation could be found for degradation at low dose rate versus high dose rate and anneal. Comparison of the low dose rate with the high dose rate anneal data indicates that MIL-STD-883, Method 1019.4 is not a worst-case test method when applied to bipolar microcircuits for low dose rate space applications.<>

Keywords

aerospace testing; bipolar analogue integrated circuits; integrated circuit testing; radiation hardening (electronics); 100 C; 100/spl deg/C anneal; MIL-STD-883; Method 1019.4; applied dose rate; bipolar linear microcircuits; bipolar microcircuits; high dose rate; high dose rate test; larger degradation; linear bipolar microcircuits; low dose rate; low dose rate space applications; room temperature; systematic correlation; total dose radiation hardness; total dose response; total dose tests; worst-case test method; Annealing; Bipolar transistors; Charge carrier density; Degradation; Modems; Performance evaluation; Production; Semiconductor device testing; Temperature measurement; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.340614

Filename

340614