Title :
GaAsP Hall mobility characterization for GaAsP/SiGe tandem solar cell on Si substrate
Author :
Soeriyadi, Anastasia H. ; Lochtefeld, Anthony ; Gerger, Andrew ; Ebert, C. ; Barnett, Allen ; Perez-Wurfl, Ivan
Author_Institution :
Sch. of Photovoltaic & Renewable Energy Eng., Univ. of New South Wales, Sydney, NSW, Australia
Abstract :
This work discusses Hall effect measurements by the van der Pauw (vdP) method of thin gallium arsenide phosphide (GaAs.84P.16) grown on silicon (Si) substrates with graded silicon germanium (SiyGe1-y) working as a buffer layer. The material characterized is used as the top cell of a recently demonstrated III-V/SiGe on Si tandem cell. We report for the first time data of the Hall mobility of the material obtained through measurement of samples with different doping levels and thicknesses and at various temperatures. This data is then used for predicting device performance using a 1-D diode model. The technique can be applied as a material screening test to ensure optimal device performance.
Keywords :
Hall mobility; III-V semiconductors; arsenic compounds; elemental semiconductors; gallium compounds; germanium compounds; phosphorus compounds; silicon compounds; solar cells; substrates; 1D diode model; Hall effect measurements; buffer layer; gallium arsenide phosphide hall mobility characterization; gallium arsenide phosphide tandem solar cell; material screening test; silicon germanium tandem solar cell; silicon substrate; van der Pauw method; Doping; Performance evaluation; Semiconductor process modeling; Silicon; Silicon germanium; Thickness measurement; Hall effect; III–V semiconductor materials; charge carrier mobility; photovoltaic cells; semiconductor device modelling; silicon germanium;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925126
