Fast switched-bias annealing of radiation-induced oxide-trapped charge and its application for testing of radiation effects in MOS structures

A method for low-dose-rate MOS device response testing is presented and verified. The test technique is based on the use of a special switched-bias irradiation with subsequent positive and negative pulses. The negative bias pulses provide nearly complete annealing of the oxide charge trapped during the positive bias pulses. As a result, after a series of positive/negative cycles the value of oxide-trapped charge does not change significantly but the interface charge increases. The advantages, limitations and applications of this test technique are described.<>