Author :
Yeoh, T.S. ; Liu, C.P. ; Swint, R.B. ; Gaur, A. ; Elarde, V.C. ; Coleman, J.J.
Author_Institution :
Illinois Univ., Urbana-Champaign, IL, USA
fDate :
5/1/2003 12:00:00 AM
Abstract :
Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.
Keywords :
nanotechnology; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; MOCVD; nanoscale resolution; quantum dots; selective epitaxy; self-assembled segregation; Bonding; Capacitive sensors; Circuits; Gallium arsenide; Gallium nitride; Lattices; MOCVD; Self-assembly; Substrates; Tensile strain;
Journal_Title :
Circuits and Devices Magazine, IEEE
DOI :
10.1109/MCD.2003.1203175
