DocumentCode
1216540
Title
Nano on nano
Author
Yeoh, T.S. ; Liu, C.P. ; Swint, R.B. ; Gaur, A. ; Elarde, V.C. ; Coleman, J.J.
Author_Institution
Illinois Univ., Urbana-Champaign, IL, USA
Volume
19
Issue
3
fYear
2003
fDate
5/1/2003 12:00:00 AM
Firstpage
26
Lastpage
31
Abstract
Selective epitaxy of quantum dots using self-assembled segregation promises nanoscale resolution at conventional lithography prices.
Keywords
nanotechnology; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; MOCVD; nanoscale resolution; quantum dots; selective epitaxy; self-assembled segregation; Bonding; Capacitive sensors; Circuits; Gallium arsenide; Gallium nitride; Lattices; MOCVD; Self-assembly; Substrates; Tensile strain;
fLanguage
English
Journal_Title
Circuits and Devices Magazine, IEEE
Publisher
ieee
ISSN
8755-3996
Type
jour
DOI
10.1109/MCD.2003.1203175
Filename
1203175
Link To Document