• DocumentCode
    1216588
  • Title

    Radiation effects R&D in the 1970s: a retrospective view

  • Author

    Srour, J.R.

  • Author_Institution
    Northrop Grumman Crp., Hawthorne, CA, USA
  • Volume
    41
  • Issue
    6
  • fYear
    1994
  • Firstpage
    2660
  • Lastpage
    2665
  • Abstract
    This paper provides a retrospective view of radiation effects research and development in the 1970s, with emphasis placed on advances made in four areas: single event effects; MOS devices; charge-coupled devices; and displacement damage. Lessons learned and future opportunities are considered.<>
  • Keywords
    MIS devices; charge-coupled devices; monolithic integrated circuits; radiation effects; research initiatives; reviews; semiconductor devices; MOS devices; R&D; charge-coupled devices; displacement damage; radiation effects; research and development; single event effects; Degradation; Insulation; Ionizing radiation; Large scale integration; MOS devices; Radiation effects; Radiation hardening; Radiative recombination; Research and development; Silicon;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.340628
  • Filename
    340628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1216588