Title :
Improvement of n-type nc-3C-SiC:H heterojunction emitter for c-Si solar cells
Author :
Shimizu, Kazuo ; Omondi, Ateto Eric ; Irikawa, Junpei ; Miyajima, Shigeyuki ; Konagai, Makoto
Author_Institution :
Dept. of Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan
Abstract :
We optimized an n-type hydrogenated nanocrystalline cubic silicon carbide (nc-3C-SiC:H) emitter by changing the plasma power density and monomethylsilane (MMS) flow rate during buffer layer deposition. Quasi-steady state photoconductance (QSSPC) method was carried out to measure the effective lifetime and implied open circuit voltage (implied-Voc). The implied-Voc above 0.7 V was achieved with the plasma power density of 1.6 W/cm2 and MMS flow rate of 2.75 sccm. These result indicates that the properties of n-type nc-3C-SiC:H emitter strongly depend on the deposition condition of a-SiC:H buffer layer.
Keywords :
carbon; hydrogen; silicon compounds; solar cells; C-SiC:H; MMS flow rate; QSSPC method; buffer layer deposition; effective lifetime; hydrogenated nanocrystalline emitter; implied open circuit voltage; monomethylsilane flow rate; n-type nc heterojunction emitter; plasma power density; quasisteady state photoconductance method; solar cells; Abstracts; Annealing; Plasma temperature; Radiative recombination; Reflectivity; Silicon; heterojunction silicon solar cells; minority carrier lifetime; plasma enhanced chemical vapor deposition;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925142
