Title :
Numerical analysis and optimum design of efficient μc-Si/μc-Si1−xGex thin-film solar cells
Author :
Ehsan, M. Amimul ; Siddiki, Mahbube Khoda ; Yang Yi
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Univ. of Missouri-Kansas City, Kansas City, MO, USA
Abstract :
This study deals with the numerical simulation and analysis of electrical transport properties of μc-Si/μc-Si1-xGex thin-film solar cells. Layer by layer optimization of this solar cell structure was done by using advanced bandgap engineering for its structural and electrical characterization. Study was performed by varying the thickness of intrinsic μc-Si and doping concentration of μc-Si1-xGex layer. It was found that μc-Si absorber and μc-Si1-xGex strained layers play a critical role to improve the light absorption properties of the solar cell structure. Obtained result shows a significant enhancement in conversion efficiency of the proposed μc-Si/μc-Si1-xGex thin-film solar cells.
Keywords :
doping; germanium compounds; numerical analysis; semiconductor thin films; silicon compounds; solar cells; Si-SiGe; advanced bandgap engineering; conversion efficiency; doping concentration; electrical characterization; electrical transport properties; layer by layer optimization; light absorption properties; numerical analysis; solar cell structure; structural characterization; thin-film solar cells; Current density; DH-HEMTs; Doping; Metals; Optimization; absorber layer; dangling bond; doping concentration; intrinsic layer; numerical simulation;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925161
