DocumentCode
1217400
Title
Device optimization for digital subthreshold logic operation
Author
Paul, Bipul C. ; Raychowdhury, Arijit ; Roy, Kaushik
Author_Institution
Coll. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume
52
Issue
2
fYear
2005
Firstpage
237
Lastpage
247
Abstract
Digital circuits operated in the subthreshold region (supply voltage less than the transistor threshold voltage) can have orders of magnitude power advantage over standard CMOS circuits for applications requiring ultralow power and medium frequency of operation. Although the implication of technology scaling on subthreshold operation is not obvious (since an obsolete technology node can deliver the same performance as a scaled technology in subthreshold), it has been shown that technology scaling helps to reduce the supply-voltage and, hence, the power consumption at iso-performance. It is possible to implement subthreshold logic circuits using the standard transistors that are designed primarily for ultra high performance super-threshold logic design. However, an Si MOSFET so optimized for performance in the super-threshold regime is not the best device to use in the subthreshold domain. We propose device designs apt for subthreshold operation. Results show that the optimized device improves the delay and power delay product (PDP) of an inverter chain by 44% and 51%, respectively, over the normal super-threshold device operated in the subthreshold region.
Keywords
CMOS integrated circuits; MOSFET; circuit optimisation; digital circuits; logic circuits; low-power electronics; semiconductor device models; CMOS circuits; Si MOSFET; device optimization; digital circuits; digital subthreshold logic operation; inverter chain; logic circuits; power consumption; power delay product; supply voltage; transistor threshold voltage; CMOS digital integrated circuits; CMOS logic circuits; CMOS technology; Delay; Digital circuits; Energy consumption; Frequency; Logic devices; MOSFETs; Threshold voltage;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2004.842538
Filename
1386593
Link To Document