Changes in the serial resistance Of a- Si, a-/μc-Si and mono-crystalline PV modules during the year

The changes in the serial resistance Rs of amorphous (a- Si) and amorphous/microcrystalline (a-/μc-Si) tandem silicon-based solar cells is a criterion to analyze the process of light -induced degradation and thermal healing of defects described by the Staebler - Wronski effect. Measurements under laboratory conditions show that the serial resistance increases during the light-induced degradation. Our annual measurement of a- Si, a-/μc-Si and mono-crystalline (c-Si) solar cells under field test conditions will verify this and it will improve the possibility of predicting the behavior of thin-film silicon photovoltaic cells. For a year, the complete current-voltage curve was measured every minute, recorded and analyzed. This data has been transferred into the equivalent circuit diagram for solar cells.