• DocumentCode
    1217954
  • Title

    Waveform degradation in VLSI interconnections

  • Author

    Kaupp, H.R.

  • Author_Institution
    Bull HN Inf. Syst. Inc., Billerica, MA, USA
  • Volume
    24
  • Issue
    4
  • fYear
    1989
  • fDate
    8/1/1989 12:00:00 AM
  • Firstpage
    1150
  • Lastpage
    1153
  • Abstract
    The interconnections between circuits on VLSI chips have a major effect on overall circuit performance. In the past, lumped circuit approximations have been used with numerical integration to analyze distributed interconnection effects on circuit switching speed. Such approximations are useful for specific cases, but they provide little general insight. Here, the exact time-domain response for a ramp function driving the general resistive-capacitive transmission line is derived. The resulting equation is analyzed to show the effect of the lines electrical parameters on its transient response. Equation time constants, which include fringing and coupling capacitance, are derived. Transient responses for specific metal, polysilicide, and polysilicon lines are plotted and analyzed
  • Keywords
    VLSI; metallisation; transient response; VLSI interconnections; circuit performance; circuit switching speed; coupling capacitance; distributed interconnection effects; electrical parameters; fringing; general resistive-capacitive transmission line; lumped circuit approximations; metal lines; numerical integration; polysilicide; polysilicon lines; ramp function; time-domain response; transient response; waveform degradation; Circuit optimization; Degradation; Distributed parameter circuits; Equations; Integrated circuit interconnections; Switching circuits; Time domain analysis; Time factors; Transient response; Very large scale integration;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.34105
  • Filename
    34105