DocumentCode :
1217954
Title :
Waveform degradation in VLSI interconnections
Author :
Kaupp, H.R.
Author_Institution :
Bull HN Inf. Syst. Inc., Billerica, MA, USA
Volume :
24
Issue :
4
fYear :
1989
fDate :
8/1/1989 12:00:00 AM
Firstpage :
1150
Lastpage :
1153
Abstract :
The interconnections between circuits on VLSI chips have a major effect on overall circuit performance. In the past, lumped circuit approximations have been used with numerical integration to analyze distributed interconnection effects on circuit switching speed. Such approximations are useful for specific cases, but they provide little general insight. Here, the exact time-domain response for a ramp function driving the general resistive-capacitive transmission line is derived. The resulting equation is analyzed to show the effect of the lines electrical parameters on its transient response. Equation time constants, which include fringing and coupling capacitance, are derived. Transient responses for specific metal, polysilicide, and polysilicon lines are plotted and analyzed
Keywords :
VLSI; metallisation; transient response; VLSI interconnections; circuit performance; circuit switching speed; coupling capacitance; distributed interconnection effects; electrical parameters; fringing; general resistive-capacitive transmission line; lumped circuit approximations; metal lines; numerical integration; polysilicide; polysilicon lines; ramp function; time-domain response; transient response; waveform degradation; Circuit optimization; Degradation; Distributed parameter circuits; Equations; Integrated circuit interconnections; Switching circuits; Time domain analysis; Time factors; Transient response; Very large scale integration;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/4.34105
Filename :
34105
Link To Document :
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