• DocumentCode
    1217996
  • Title

    Emerging Nanoscale Memory and Logic Devices: A Critical Assessment

  • Author

    Hutchby, James A. ; Cavin, Ralph ; Zhirnov, Victor ; Brewer, Joe E. ; Bourianoff, George

  • Volume
    41
  • Issue
    5
  • fYear
    2008
  • fDate
    5/1/2008 12:00:00 AM
  • Firstpage
    28
  • Lastpage
    32
  • Abstract
    This article presents the ERD Working Group´s collective judgment with respect to the long-term potential of nanoscale memory and logic devices to replace silicon-based CMOS logic or baseline memory technology. It does not judge their potential to supplement or complement CMOS. The intent is thus prescriptive, not prescriptive: to provide a technically grounded, objective benchmark for emerging research memory and logic devices.
  • Keywords
    CMOS logic circuits; CMOS memory circuits; nanoelectronics; CMOS logic device technology; CMOS memory device technology; ERD Working Group; ITRS working group; nanodevices; CMOS logic circuits; CMOS technology; FETs; Integrated circuit technology; Logic devices; MOSFET circuits; Nanoscale devices; Power dissipation; Silicon; Switches; CMOS; ITRS; MOSFET; logic; memory; nanotechnology;
  • fLanguage
    English
  • Journal_Title
    Computer
  • Publisher
    ieee
  • ISSN
    0018-9162
  • Type

    jour

  • DOI
    10.1109/MC.2008.154
  • Filename
    4519932
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1217996