GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications

Author

Bisping, Dirk ; Pucicki, Damian ; Fischer, Marc ; Koeth, Johannes ; Zimmermann, Christian ; Weinmann, Pia ; Höfling, Sven ; Kamp, Martin ; Forchel, Alfred

Author_Institution

Wilhelm-Conrad-Rontgen- Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg

Volume

15

Issue

3

fYear

2009

Firstpage

968

Lastpage

972

Abstract

GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm^-1, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M ² down to 1.4, high brightness of up to 23 MW/cm²middotsr, and nearly spatial single-mode emission have been obtained.

Keywords

III-V semiconductors; Raman lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser stability; light propagation; optical losses; optical pumping; semiconductor lasers; GaInNAs; Raman amplifiers; beam propagation factor; high-beam quality; high-power laser diode; optical pumping; power 1 W; single-mode laser emission; temperature 293 K to 298 K; wavelength 1220 nm to 1240 nm; wavelength-stabilized tapered laser diodes; Amplifiers; continuous-wave (CW) lasers; epitaxial growth; optical fiber amplifiers; optical pumping; quantum well lasers; semiconductor epitaxial layers; semiconductor lasers;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2009.2014250

Filename

4808179