Title :
GaInNAs-Based High-Power and Tapered Laser Diodes for Pumping Applications
Author :
Bisping, Dirk ; Pucicki, Damian ; Fischer, Marc ; Koeth, Johannes ; Zimmermann, Christian ; Weinmann, Pia ; Höfling, Sven ; Kamp, Martin ; Forchel, Alfred
Author_Institution :
Wilhelm-Conrad-Rontgen- Res. Center for Complex Mater. Syst., Univ. Wurzburg, Wurzburg
Abstract :
GaInNAs-based high-power laser diodes with emission in the 1220-1240 nm wavelength range are presented. Broad-area (BA) devices show very low internal losses of only 0.5 cm-1, allowing high continuous-wave room-temperature output powers of almost 9 W and emission at a wavelength of 1220 nm. Based on the needs for applications like, e.g., pumping of Raman amplifiers, wavelength-stabilized tapered laser diodes are shown with maximum output powers of 1 W together with a high beam quality. Beam propagation factors M 2 down to 1.4, high brightness of up to 23 MW/cm2middotsr, and nearly spatial single-mode emission have been obtained.
Keywords :
III-V semiconductors; Raman lasers; gallium arsenide; gallium compounds; indium compounds; laser beams; laser stability; light propagation; optical losses; optical pumping; semiconductor lasers; GaInNAs; Raman amplifiers; beam propagation factor; high-beam quality; high-power laser diode; optical pumping; power 1 W; single-mode laser emission; temperature 293 K to 298 K; wavelength 1220 nm to 1240 nm; wavelength-stabilized tapered laser diodes; Amplifiers; continuous-wave (CW) lasers; epitaxial growth; optical fiber amplifiers; optical pumping; quantum well lasers; semiconductor epitaxial layers; semiconductor lasers;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2009.2014250
