DocumentCode :
1218295
Title :
Excellent Switching Uniformity of Cu-Doped 
Bilayer for Nonvolatile Memory Applications
Author :
Yoon, Jaesik ; Choi, Hyejung ; Lee, Dongsoo ; Park, Ju-Bong ; Lee, Joonmyoung ; Seong, Dong-jun ; Ju, Yongkyu ; Chang, Man ; Jung, Seungjae ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju
Volume :
30
Issue :
5
fYear :
2009
fDate :
5/1/2009 12:00:00 AM
Firstpage :
457
Lastpage :
459
Abstract :
We have investigated a Cu-doped MoOx/GdOx bilayer film for nonvolatile memory applications. By adopting an ultrathin GdOx layer, we obtained excellent device characteristics such as resistance ratio of three orders of magnitude, uniform distribution of set and reset voltages, switching endurance up to 104 cycles, and ten years of data retention at 85degC. By adopting bilayer films of Cu-doped MoOx/GdOx, a local filament was formed by a two-step process. Improved memory characteristics can be explained by the formation of nanoscale local filament in the ultrathin GdOx layer.
Keywords :
gadolinium compounds; molybdenum compounds; random-access storage; MoOx-GdOx:Cu; bilayer films; nanoscale local filament; nonvolatile memory applications; temperature 85 degC; $hbox{GdO}_{x}$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2009.2015687
Filename :
4808199
Link To Document :
