Title :
Graphene Frequency Multipliers
Author :
Wang, Han ; Nezich, Daniel ; Kong, Jing ; Palacios, Tomas
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
fDate :
5/1/2009 12:00:00 AM
Abstract :
In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies.
Keywords :
electron mobility; field effect transistors; frequency multipliers; graphene; rectifiers; C; ambipolar graphene field-effect transistor; ambipolar transport; common-source configuration; drain electrode; electron mobility; frequency 10 kHz; frequency 20 kHz; frequency-doubling devices; full-wave signal rectifiers; graphene flakes; graphene frequency multipliers; radio-frequency power; sinusoidal voltage; spectral purity; Frequency doublers; frequency multipliers; full-wave rectifiers; graphene field-effect transistors (G-FETs);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2016443