• DocumentCode
    1218486
  • Title

    Graphene Frequency Multipliers

  • Author

    Wang, Han ; Nezich, Daniel ; Kong, Jing ; Palacios, Tomas

  • Author_Institution
    Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
  • Volume
    30
  • Issue
    5
  • fYear
    2009
  • fDate
    5/1/2009 12:00:00 AM
  • Firstpage
    547
  • Lastpage
    549
  • Abstract
    In this letter, the ambipolar transport properties of graphene flakes have been used to fabricate full-wave signal rectifiers and frequency-doubling devices. By correctly biasing an ambipolar graphene field-effect transistor in common-source configuration, a sinusoidal voltage applied to the transistor gate is rectified at the drain electrode. Using this concept, frequency multiplication of a 10-kHz input signal has been experimentally demonstrated. The spectral purity of the 20-kHz output signal is excellent, with more than 90% of the radio-frequency power in the 20-kHz frequency. This high efficiency, combined with the high electron mobility of graphene, makes graphene-based frequency multipliers a very promising option for signal generation at ultrahigh frequencies.
  • Keywords
    electron mobility; field effect transistors; frequency multipliers; graphene; rectifiers; C; ambipolar graphene field-effect transistor; ambipolar transport; common-source configuration; drain electrode; electron mobility; frequency 10 kHz; frequency 20 kHz; frequency-doubling devices; full-wave signal rectifiers; graphene flakes; graphene frequency multipliers; radio-frequency power; sinusoidal voltage; spectral purity; Frequency doublers; frequency multipliers; full-wave rectifiers; graphene field-effect transistors (G-FETs);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2009.2016443
  • Filename
    4808221