• DocumentCode
    1218569
  • Title

    Intersubband absorption of TE and TM waves in p-type semiconductor superlattice including the effects of continuum states

  • Author

    Tsang, Hung ; Chuang, Shun-Lien

  • Author_Institution
    Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
  • Volume
    31
  • Issue
    1
  • fYear
    1995
  • fDate
    1/1/1995 12:00:00 AM
  • Firstpage
    20
  • Lastpage
    28
  • Abstract
    We present theoretical results for the absorption coefficients for both TE and TM waves due to intersubband transitions within the valence subbands of a p-type superlattice. Both the bound and continuum states are included in our calculation. The continuum states are discretized by applying a periodic boundary condition. Numerical results are illustrated for different well and barrier widths. The results show that the intersubband transitions among the bound states result in sharp resonance absorption while the intersubband transitions between bound states and continuum states give a broad maximum at a photon energy larger than the barrier height. The TE and TM absorption coefficients are comparable in magnitude. Our theoretical results are in agreement with recent experimental observations on bound states to continuum states transitions
  • Keywords
    absorption coefficients; bound states; boundary-value problems; light absorption; semiconductor quantum wells; semiconductor superlattices; TE waves; TM waves; absorption coefficients; barrier height; barrier widths; bound states; continuum states; continuum states transitions; intersubband absorption; intersubband transitions; p-type semiconductor superlattice; p-type superlattice; periodic boundary condition; photon energy; sharp resonance absorption; valence subbands; well widths; Absorption; Board of Directors; Carrier confinement; Lead compounds; Nonlinear optics; Optical mixing; Optical polarization; Optical superlattices; Semiconductor superlattices; Tellurium;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.341703
  • Filename
    341703