DocumentCode
1218569
Title
Intersubband absorption of TE and TM waves in p-type semiconductor superlattice including the effects of continuum states
Author
Tsang, Hung ; Chuang, Shun-Lien
Author_Institution
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume
31
Issue
1
fYear
1995
fDate
1/1/1995 12:00:00 AM
Firstpage
20
Lastpage
28
Abstract
We present theoretical results for the absorption coefficients for both TE and TM waves due to intersubband transitions within the valence subbands of a p-type superlattice. Both the bound and continuum states are included in our calculation. The continuum states are discretized by applying a periodic boundary condition. Numerical results are illustrated for different well and barrier widths. The results show that the intersubband transitions among the bound states result in sharp resonance absorption while the intersubband transitions between bound states and continuum states give a broad maximum at a photon energy larger than the barrier height. The TE and TM absorption coefficients are comparable in magnitude. Our theoretical results are in agreement with recent experimental observations on bound states to continuum states transitions
Keywords
absorption coefficients; bound states; boundary-value problems; light absorption; semiconductor quantum wells; semiconductor superlattices; TE waves; TM waves; absorption coefficients; barrier height; barrier widths; bound states; continuum states; continuum states transitions; intersubband absorption; intersubband transitions; p-type semiconductor superlattice; p-type superlattice; periodic boundary condition; photon energy; sharp resonance absorption; valence subbands; well widths; Absorption; Board of Directors; Carrier confinement; Lead compounds; Nonlinear optics; Optical mixing; Optical polarization; Optical superlattices; Semiconductor superlattices; Tellurium;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/3.341703
Filename
341703
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