An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity

Author

Fang, Z.J. ; Smith, G.M. ; Forbes, D.V. ; Coleman, J.J.

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

31

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

44

Lastpage

48

Abstract

An InGaAs-GaAs-AlGaAs strained layer quantum-well ring laser with a tetragonal cavity consisting of one symmetric and one asymmetric corner reflector both fabricated by reactive ion etching is described. Two beams emit from one facet with inclined angles predicted by Snell´s Law. An increase of the threshold with incident angle is observed. Longitudinal mode behavior and L-I characteristics, which indicate the presence of strong competition between clockwise and counter-clockwise traveling waves, are described

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser modes; optical fabrication; quantum well lasers; ring lasers; sputter etching; InGaAs-GaAs strained layer single quantum-well ring laser; InGaAs-GaAs-AlGaAs; L-I characteristics; Snell´s Law; asymmetric corner reflector; clockwise traveling waves; counter-clockwise traveling waves; incident angle; inclined angles; longitudinal mode behavior; reactive ion etching; reactive ion-etched tetragonal cavity; strong competition; symmetric corner reflector; threshold; Chemical lasers; Dry etching; Laser modes; Laser theory; Quantum well lasers; Reflectivity; Ring lasers; Semiconductor lasers; Surface emitting lasers; Waveguide lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.341706

Filename

341706