Title :
Electric-field-induced refractive index changes in InGaAs-InAlAs asymmetric coupled quantum wells
Author_Institution :
NTT Opto-Electron. Labs., Atsugi, Japan
fDate :
1/1/1995 12:00:00 AM
Abstract :
Two kinds of InGaAs-InAlAs asymmetric coupled quantum wells (QW´s) were numerically analyzed in an effort to enhance change in the refractive index (Δn) at longer wavelengths where absorption coefficient is small. The analysis reveals the operating voltage, Δn, chirp parameter, Δn/Δk, (Δk: change in the extinction coefficient) and figure of merit, Δn/α, (α: absorption coefficient) can be improved by these two kinds of the QW´s. This improvement is caused by an abrupt electric-field-induced increase or decrease in the oscillator strength for the lowest heavy hole exciton
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; electric field effects; electro-optical effects; excitons; gallium arsenide; indium compounds; oscillator strengths; refractive index; semiconductor quantum wells; InGaAs-InAlAs; InGaAs-InAlAs asymmetric coupled quantum wells; abrupt electric-field-induced increase; absorption coefficient; chirp parameter; electric-field-induced refractive index changes; figure of merit; longer wavelengths; lowest heavy hole exciton; numerically analyzed; operating voltage; oscillator strength; Absorption; Excitons; Optical devices; Optical interferometry; Optical materials; Optical refraction; Optical variables control; Refractive index; Resonance; Voltage;
Journal_Title :
Quantum Electronics, IEEE Journal of
