Electric-field-induced refractive index changes in InGaAs-InAlAs asymmetric coupled quantum wells

Author

Susa, Nobuhiko

Author_Institution

NTT Opto-Electron. Labs., Atsugi, Japan

Volume

31

Issue

1

fYear

1995

fDate

1/1/1995 12:00:00 AM

Firstpage

92

Lastpage

100

Abstract

Two kinds of InGaAs-InAlAs asymmetric coupled quantum wells (QW´s) were numerically analyzed in an effort to enhance change in the refractive index (Δn) at longer wavelengths where absorption coefficient is small. The analysis reveals the operating voltage, Δn, chirp parameter, Δn/Δk, (Δk: change in the extinction coefficient) and figure of merit, Δn/α, (α: absorption coefficient) can be improved by these two kinds of the QW´s. This improvement is caused by an abrupt electric-field-induced increase or decrease in the oscillator strength for the lowest heavy hole exciton

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; electric field effects; electro-optical effects; excitons; gallium arsenide; indium compounds; oscillator strengths; refractive index; semiconductor quantum wells; InGaAs-InAlAs; InGaAs-InAlAs asymmetric coupled quantum wells; abrupt electric-field-induced increase; absorption coefficient; chirp parameter; electric-field-induced refractive index changes; figure of merit; longer wavelengths; lowest heavy hole exciton; numerically analyzed; operating voltage; oscillator strength; Absorption; Excitons; Optical devices; Optical interferometry; Optical materials; Optical refraction; Optical variables control; Refractive index; Resonance; Voltage;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.341712

Filename

341712