Title :
Optically pumped intersubband lasers based on quantum wells
Author :
Afzali-Kushaa, A. ; Haddad, G.I. ; Norris, T.B.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
1/1/1995 12:00:00 AM
Abstract :
A far infrared (FIR) laser based on intersubband transitions in quantum wells is proposed where a pumping laser is used to create population inversion in the structure. The goal is to develop a structure which operates essentially as a 4-level laser, to minimize bottlenecking of the lower laser state. Multiple quantum wells can be used in the active laser of these structures to enhance the laser gain and the minimum required reflectivity in the cavity structure. The possibility of using both conduction and valence band quantum-well structures are investigated. Our study shows that, due to high intersubband scattering rates in the valence band structure, the creation of population inversion is more difficult and requires a high pumping power density while in the conduction band structure, population inversion can be achieved by a moderate pumping power density. The maximum population inversion in the conduction band structure is estimated to be 2.1×1011 cm2, which requires a pumping power density 2 kW cm-2 for a single quantum well. The threshold power as well as the minimum required reflectivity of the cavity structure for the conduction band scheme are estimated for different well numbers
Keywords :
conduction bands; infrared sources; laser cavity resonators; laser theory; laser transitions; optical pumping; population inversion; quantum well lasers; reflectivity; valence bands; 4-level laser; FIR laser; active laser; bottlenecking; cavity structure; conduction band quantum-well structures; far infrared laser; intersubband transitions; laser gain; lower laser state; minimum required reflectivity; moderate pumping power density; multiple quantum wells; optically pumped intersubband lasers; population inversion; pumping laser; pumping power density; quantum wells; reflectivity; single quantum well; threshold power; valence band quantum-well structures; Finite impulse response filter; Frequency; Gas lasers; Laser excitation; Laser transitions; Masers; Optical pumping; Pump lasers; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of