• DocumentCode
    121876
  • Title

    Study of CdS/CdTe solar cells activated with N-O2-CHClF2 gas mixture

  • Author

    Pena, Juan Luis ; Riech, Ines ; Rejon, Victor

  • Author_Institution
    Appl. Phys. Dept., CINVESTAV-IPN, Mérida, Mexico
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1679
  • Lastpage
    1681
  • Abstract
    The activation process is an important step for fabricating CdTe based solar cells. In this work, it was made by using Argon-CHClF2, Argon-Oxygen-CHClF2 and Nitrogen-Oxygen-CHClF2 gas mixtures. Solar cells with 12.0% of efficiency for 1 cm2 were obtained when it is activated by using Nitrogen-Oxygen-CHClF2 gas mixture. We show that Nitrogen also plays an important role for improving the solar cell efficiency. The solar cell reported in this work were fabricated using ZnO/CdS/CdTe layers grown onto commercial ITO used as TCO. Both ZnO and CdS thin films were deposited using rf-sputtering. The first one is working as a buffer layer. The CdS is deposited in Argon atmosphere and it is not intentionally treated before depositing CdTe thin film with 8 μm thickness by the conventional CSS technique. The cell uses a simple sputtered Cu (5nm)/Mo (750nm) back contact. Illuminated and darkness J-V curves, HR-SEM images before and after the activation process are presented. The effect of the gas mixtures on the parameters of the CdS/CdTe solar cell is discussed.
  • Keywords
    II-VI semiconductors; argon; cadmium compounds; solar cells; sputtered coatings; tellurium compounds; zinc compounds; Ar; CSS technique; HR-SEM images; J-V curves; N-O2-CHClF2; ZnO-CdS-CdTe; activation process; argon atmosphere; gas mixture; gas mixtures; rf-sputtering; solar cells; thin films; Annealing; Graphite; Indium tin oxide; Nitrogen; Zinc oxide; Activation process; CdS/CdTe solar cells; annealing process;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925243
  • Filename
    6925243