Title :
An extended Tanh law MOSFET model for high temperature circuit simulation
Author :
Osman, Ashraf A. ; Osman, Mohamed A. ; Dogan, Numan S. ; Imam, Mohamed A.
Author_Institution :
Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA
fDate :
2/1/1995 12:00:00 AM
Abstract :
The Tanh law MOSFET model proposed earlier by Shousha & Aboulwafa (see ibid., vol. 28, no. 2, p. 176-9, 1993) is extended to predict the temperature dependence of the drain current by including the temperature dependence of the threshold voltage and the mobility. The model requires fewer temperature dependent parameters compared to SPICE level2 model. The extended model shows good agreement between measurement and simulation of devices with different device geometries over wide temperature range (27-200°C)
Keywords :
MOSFET; carrier mobility; circuit analysis computing; semiconductor device models; 27 to 200 C; drain current; extended Tanh law MOSFET model; high temperature circuit simulation; mobility; temperature dependence; threshold voltage; CMOS technology; Circuit simulation; Geometry; MOSFET circuits; Predictive models; SPICE; Solid modeling; Temperature dependence; Temperature distribution; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
