Monolithic millimeter-wave pseudomorphic HEMT power amplifiers at Ka-band

Author

Ho, T. ; Metze, G. ; Cornfeld, A. ; Lee, T. ; Pande, K. ; Huang, H. ; Ferguson, P. ; Foisy, M.

Author_Institution

COMSAT Lab., Clarksburg, MD, USA

Volume

2

Issue

8

fYear

1992

Firstpage

325

Lastpage

327

Abstract

A Ka-band monolithic HEMT power amplifier, based on 0.25- mu m gatelength single quantum-well AlGaAs-InGaAs pseudomorphic high-electron mobility transistor (PM-HEMT) technology, has been developed for millimeter-wave system applications. These amplifiers include single-ended and on-chip combined configurations and have on-chip DC-block, RF-bypass and bias network. A cascaded four-stage power amplifier exhibited 210 mW output power with an associated gain of 21.3 dB at 34.5 GHz. The saturated output power of this amplifier exceeded 230 mW. These power modules need only single positive bias to simplify system power supply requirements, and are highly stable. Moreover, multistages can easily be cascaded/combined to achieve even higher gain and power for future millimeter-wave systems.<>

Keywords

MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; power amplifiers; 0.25 micron; 21.3 dB; 210 to 230 mW; 3.4 GHz; AlGaAs-InGaAs; HEMT power amplifiers; Ka-band; high-electron mobility transistor; millimeter-wave; single quantum-well; HEMTs; High power amplifiers; MODFETs; Millimeter wave technology; Millimeter wave transistors; Network-on-a-chip; PHEMTs; Power amplifiers; Power generation; Quantum wells;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.153602

Filename

153602