• DocumentCode
    1219149
  • Title

    Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers

  • Author

    Li, L.H. ; Rossetti, M. ; Fiore, A. ; Occhi, L. ; Velez, C.

  • Author_Institution
    Inst. of Photonics & Quantum Electron., Ecole Polytechnique Federale de Lausanne, Switzerland
  • Volume
    41
  • Issue
    1
  • fYear
    2005
  • Firstpage
    41
  • Lastpage
    43
  • Abstract
    A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active region is demonstrated. The fabricated QD SLEDs exhibit a large spectral width up to 121 nm, covering the range 1165-1286 nm.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor quantum dots; superluminescent diodes; 1165 to 1286 nm; InGaAs; chirped multiple InAs quantum dot multilayers; emission spectrum; spectral width; superluminescent diode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20056995
  • Filename
    1387788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1219149