Boron penetration through gate oxide from decaborane gate electrode implantation

Author

Bourdelle, K.K. ; Agarwal, Abhishek ; Perel, A.S.

Author_Institution

Agere Syst., Orlando, FL, USA

Volume

Issue

fYear

2003

fDate

5/15/2003 12:00:00 AM

Firstpage

807

Lastpage

808

Abstract

Boron penetration from the gate electrode into the Si substrate presents a significant problem in advanced PMOS device fabrication. It is known that hydrogen enhances B diffusion in silicon dioxide. It is shown that hydrogen from decaborane gate electrode implants also enhances boron penetration leading to a degradation of PMOS transistor parameters.

Keywords

MOSFET; boron; diffusion; ion implantation; semiconductor device reliability; 0.16 micron; B penetration; B₁₀H₁₄; B₁₀H₁₄ gate electrode implantation; PMOS device fabrication; PMOS transistor parameter degradation; Si; Si substrate; Si:B-SiO₂; decaborane gate electrode implants; dual-polysilicon W-polycide CMOS technology; gate electrode; gate oxide; hydrogen enhanced B diffusion;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20030521

Filename

1204798

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1219185