مرکز منطقه ای اطلاع رساني علوم و فناوري - Record fT and fT+fMAX performance of InP/InGaAs single heterojunction bipolar transistors

DocumentCode :

1219217

Title :

Record f_T and f_T+f_MAX performance of InP/InGaAs single heterojunction bipolar transistors

Author :

Hafez, W. ; Lai, J.W. ; Feng, M.

Author_Institution :

Dept. of Electr. & Comput. Eng., Univ. of Illinois, Champaign-Urbana, IL, USA

Volume :

Issue :

fYear :

2003

fDate :

5/15/2003 12:00:00 AM

Firstpage :

811

Lastpage :

813

Abstract :

Record performance is reported for InP/InGaAs single heterojunction transistors. An f_T of 382 GHz is reported on a 0.5×12 μm device, the highest for any bipolar device on any material system. Record f_T+f_MAX of 673 GHz was achieved on a 0.35×8 μm device.

Keywords :

III-V semiconductors; current density; gallium arsenide; heterojunction bipolar transistors; indium compounds; millimetre wave bipolar transistors; 0.35 micron; 0.5 micron; 12 micron; 382 GHz; 673 GHz; 8 micron; InP-InGaAs; InP/InGaAs HBTs; SHBT; current density; high-speed applications; laterally scaled submicron process; low-power circuit applications; output breakdown voltage; single heterojunction bipolar transistors; turn-on voltages; ultra-high-speed ADCs; vertically scaled submicron process;

fLanguage :

English

Journal_Title :

Electronics Letters

Publisher :

iet

ISSN :

0013-5194

Type :

jour

DOI :

10.1049/el:20030534

Filename :

1204801

Link To Document :

https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1219217