• DocumentCode
    121924
  • Title

    Dry-epitaxial lift-off for high efficiency solar cells

  • Author

    Farah, Joumana ; Nicholson, John ; Thirunavukkarasu, Sekar ; Wasmer, Kilian

  • Author_Institution
    OptiCOMP Networks, Attleboro, MA, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    1796
  • Lastpage
    1801
  • Abstract
    There is a need for lightweight and flexible solar cells and arrays with efficiency > 30% and specific power > 1000 W/kg for commercial and military terrestrial and aerial (UAV) applications and for space missions, that are cost-effective. Inverted metamorphic triple-junction (IMM3J) solar cells achieve the highest efficiencies, but cost > $ 250/W. This high cost is split among the substrate (40%), epitaxial growth (30%) and front side processing including metallization (30%). It is desired to reduce the cost to $ 50/W. This is especially important for space missions exceeding 10 kW, for short-term missions to low earth orbit, and for picosatellites such as cubesats. Epitaxial lift-off (ELO) is used to transfer the epi-layer to a flexible substrate and reuse the Ge or GaAs wafer to grow another epi-layer. A dry epitaxial lift-off (DELO) process is presented by driving a controlled crack at the epi/wafer interface and transferring wafer scale to a polyimide substrate permanent carrier of the fragile solar cell, thus eliminating the need for detaching the substrate. The crack is driven purely by the thermal stresses due to the mismatch in CTE between GaAs and polyimide without the necessity for any external mechanical force or tool to aid crack propagation. This process yields single atomic plane cleavage which reduces the need for post lift-off polishing, and allows multiple reuses of the substrate up to 10 times. This allows the use of automated roll-to-roll processing. This combined with cheaper metallization using aerosol jet 3D printing and additive manufacturing techniques allows reducing the cost down to $ 50/W. This will open up terrestrial applications of III-V solar cells.
  • Keywords
    III-V semiconductors; epitaxial growth; gallium arsenide; semiconductor device metallisation; semiconductor epitaxial layers; solar cell arrays; thermal stresses; CTE; DELO process; ELO; GaAs; III-V solar cells; IMM3J solar cells; UAV applications; additive manufacturing techniques; aerosol jet 3D printing; atomic plane cleavage; automated roll-to-roll processing; cost reduction; crack propagation; dry-epitaxial lift-off; epitaxial-wafer interface; flexible solar cell arrays; high efficiency solar cells; inverted metamorphic triple-junction solar cells; metallization; military aerial applications; military terrestrial applications; picosatellites; polyimide substrate; space missions; thermal stresses; Gallium arsenide; Photovoltaic cells; Polyimides; Rough surfaces; Stress; Substrates; Surface cracks; Dry epitaxial Lift-off; GaAs; crystallographic orientation; fracture toughness; polyimide; thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925271
  • Filename
    6925271