• DocumentCode
    1219266
  • Title

    High temperature surface acoustic wave devices: fabrication and characterisation

  • Author

    Thiele, J.A. ; Da Cunha, M. Pereira

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Univ. of Maine, Orono, ME, USA
  • Volume
    39
  • Issue
    10
  • fYear
    2003
  • fDate
    5/15/2003 12:00:00 AM
  • Firstpage
    818
  • Lastpage
    819
  • Abstract
    Langasite (LGS) and quartz surface acoustic wave devices have been fabricated and tested up to 750°C, for frequency control applications and sensors. The measured magnitude of the transmission coefficient (|S21|) and temperature coefficient of frequency (TCF) are compared to numerical predictions and verify quantitatively that the fabricated LGS devices maintain good operation up to 750°C, whereas quartz devices rapidly degrade at around 580°C due to the alpha-beta (α to β) transition.
  • Keywords
    S-parameters; frequency control; gallium compounds; high-temperature electronics; lanthanum compounds; quartz; surface acoustic wave devices; 580 C; 750 C; La3Ga5SiO14; Pt-Zr-La3Ga5SiO14; Pt-Zr-SiO2; SAW device characterisation; SiO2; alpha-beta transition; frequency control applications; high temperature SAW devices; langasite devices; quartz devices; sensor applications; surface acoustic wave device fabrication; temperature coefficient of frequency; transmission coefficient;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20030511
  • Filename
    1204805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1219266