The effects of indium pre-evaporation on rotational twin formation in GaAs films on Si(111)

The effects of In pre-evaporation on the formation of rotational twin domains (TW) in GaAs layers on Si (111) substrates were systematically investigated. Atomic arrangements of In atoms on the Si substrate during pre-evaporation were studied and resulting formation of TW were discussed. The pre-evaporation of In resulted in the formation of InAs islands. The size of InAs islands was smaller than that of GaAs islands grown on Si substrate without In pre-evaporation. The amount of TW increased with increasing sizes of GaAs or InAs at initial phase. These results suggested that the size of island formed during the initial pre-evaporation phase could control the TW growth in the final GaAs film.