DocumentCode :
1219327
Title :
Performance simulation of nanoscale silicon rod field-effect transistor logic
Author :
Dwyer, Chris ; Vicci, Leandra ; Taylor, Russell M.
Author_Institution :
Dept. of Comput. Sci., Univ. of North Carolina, Chapel Hill, NC, USA
Volume :
2
Issue :
2
fYear :
2003
fDate :
6/1/2003 12:00:00 AM
Firstpage :
69
Lastpage :
74
Abstract :
We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (RG-FET) using the PISCES-IIb semiconductor drift-diffusion solver. The results from these simulations are used by a customized SPICE 3f5 kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique that we outline.
Keywords :
digital simulation; electronic engineering computing; field effect logic circuits; field effect transistors; logic gates; nanoelectronics; self-assembly; semiconductor device models; silicon; PISCES-IIb; SPICE kernel modifications; Si; Si ring-gated FET; customized SPICE 3f5 kernel; logic gates; nanoscale Si rod FET logic; performance simulation; ring-gated field-effect transistor; rod shaped nanoscale FET; self-assembling fabrication technique; semiconductor drift-diffusion solver; Circuits; DNA; FETs; Fabrication; Gold; Kernel; Logic; SPICE; Self-assembly; Silicon;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2003.812592
Filename :
1204817
Link To Document :
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