DocumentCode :
121969
Title :
PID results at low irradiances on c-Si modules
Author :
Braisaz, Benoit ; Radouane, Khalid
Author_Institution :
EDF R&D - ENERBAT, Moret sur Loing, France
fYear :
2014
fDate :
8-13 June 2014
Firstpage :
1993
Lastpage :
1996
Abstract :
In order to determine the profitability of a PV project, power plant operators need to predict accurately the final energy production. It is crucial to know the operating power of PV modules. The correlation between the indoor measured power and the operating power is therefore a major issue for several services, such as project design, operation and maintenance. In order to install aging resistant modules, module tests should be selective and representative. In this paper, we implemented an indoor test methodology to accelerate PID degradation dependant on stress (T, RH, V) and mounting systems. The ultimate goal is to define a test protocol which could be representative, selective and reproducible. It could be used as recommendation to IEC 62804 draft. From our study, we concluded that low light behavior should be a mandatory criterion for pass/fail results. STC measurements are not sufficient for measuring PID consequences.
Keywords :
IEC standards; elemental semiconductors; photovoltaic power systems; silicon; IEC 62804 draft; PID degradation; PV project; STC measurements; Si; aging resistant modules; energy production; fail results; indoor test methodology; low irradiances; low light behavior; mounting systems; operating power; pass results; potential induced degradation; power plant operators; project design; project maintenance; project operation; test protocol; Degradation; Electroluminescence; Humidity; Ions; Resistance; Standards; Stress; Low irradiances; PID; protocols; tests;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
Type :
conf
DOI :
10.1109/PVSC.2014.6925316
Filename :
6925316
Link To Document :
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