• DocumentCode
    1219718
  • Title

    High-power 0.98 mu m GaInAs strained quantum well lasers for Er3+-doped fibre amplifier

  • Author

    Okayasu, M. ; Takeshita, Takaharu ; Yamada, Makoto ; Horiguchi, M. ; Fukuda, Motohisa ; Kozen, A. ; Oe, Katsutoshi ; Uehara, Satoshi

  • Author_Institution
    NTT Opto-Electron. Labs., Kanagawa, Japan
  • Volume
    25
  • Issue
    23
  • fYear
    1989
  • Firstpage
    1563
  • Lastpage
    1565
  • Abstract
    High-power GaInAs strained quantum well lasers with an emission wavelength of 0.98 mu m, suitable for Er3+-doped fibre amplifier pumping, have been fabricated. A threshold current of 15 mA and a peak output power as high as 85 mW have been obtained for the ridge waveguide structure with AR/HR facet coating. Highly efficient pumping for the 1.536 mu m signals has been confirmed.
  • Keywords
    III-V semiconductors; erbium; gallium arsenide; indium compounds; optical communication equipment; optical fibres; optical pumping; semiconductor junction lasers; semiconductor quantum wells; 0.98 micron; 1.536 micron; 15 mA; 85 mW; AR/HR facet coating; GaInAs; SiO 2:Er 3+; emission wavelength; fibre amplifier pumping; peak output power; ridge waveguide structure; strained quantum well lasers; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891050
  • Filename
    138794
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1219718