• DocumentCode
    1219825
  • Title

    MESFETs in thin silicon on SIMOX

  • Author

    Vogt, Hendrik ; Burbach, Gert ; Belz, Julian ; Zimmer, G.

  • Author_Institution
    Fraunhofer Inst. of Microelectron. Circuits & Syst., Duisburg, West Germany
  • Volume
    25
  • Issue
    23
  • fYear
    1989
  • Firstpage
    1580
  • Lastpage
    1581
  • Abstract
    Si MESFETs have been built into a thin (100 nm) Si film on buried oxide implanted wafers. Aluminium has been used as gate material to obtain process compatibility with a high-performance CMOS process. With appropriate back bias the normally-on devices become enhancement-type. The high-quality SIMOX substrate provides excellent transconductance, while the thin film reduces two-dimensional effects.
  • Keywords
    Schottky gate field effect transistors; elemental semiconductors; field effect integrated circuits; integrated circuit technology; silicon; 100 nm; Al gate material; Al-Si-SiO 2-Si structure; CMOS process compatibility; MOS structure; SIMOX substrate; Si MESFETs; Si thin film; back bias; buried oxide implanted wafers; enhancement-type; normally-on devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891061
  • Filename
    138805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1219825