Title :
High-voltage, wavelength-discriminating light-activated GaAs thyristor
Author :
Carson, R.F. ; Hughes, R.C. ; Zipperian, T.E. ; Weaver, H.T. ; Brennan, T.M. ; Hammons, B.E. ; Klem, J.F.
Author_Institution :
Sandia Nat. Labs., Albuquerque, NM, USA
Abstract :
A GaAs thyristor with 35 V breakover voltage has been fabricated that exhibits large discrimination between light and flash X-ray power levels for triggering. Approximately 108 times more X-ray than light power is needed to switch the device over a bias voltage range of 25 V. This discrimination property represents a form of radiation hardening for a light activated switch.
Keywords :
III-V semiconductors; X-ray effects; gallium arsenide; photoelectric devices; radiation hardening (electronics); semiconductor switches; thyristors; 25 V; 35 V; GaAs thyristor; HV two-terminal device; III-V semiconductors; bias voltage range; breakover voltage; flash X-ray power levels; high voltage; light activated switch; radiation hardening; triggering; wavelength-discriminating;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19891069
