Title :
A GaAs MESFET small-signal equivalent circuit including transmission line effects
Author :
Fjeldly, Tor A. ; Paulsen, André ; Jensen, øivind
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Trondheim Univ., Norway
fDate :
9/1/1989 12:00:00 AM
Abstract :
A small-signal equivalent circuit for the GaAs MESFET, suitable for the design of integrated circuits, was developed that includes the following features: (1) at high frequencies, the gate channel has the character of an RC transmission line, for which a π-equivalent representation is used; (2) under saturated current conditions, a stationary high-field domain may be present in the conducting channel, for which an equivalent is derived in terms of a small-signal admittance. The resulting equivalent circuit was optimized with very good results by modeling process average S-parameters between 1 and 25 GHz for a 1 μm gate device. The basic structure of the model is relevant for other FET designs such as heterostructure FETs (HEMTs) and devices with submicrometer gate lengths
Keywords :
III-V semiconductors; MMIC; S-parameters; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor device models; 1 micron; 1 to 25 GHz; GaAs; HEMTs; MESFET; RC transmission line; S-parameters; design of integrated circuits; features; gate channel; high frequencies; modeling; saturated current conditions; semiconductor; small-signal equivalent circuit; stationary high-field domain; transmission line effects; Admittance; Distributed parameter circuits; Equivalent circuits; FETs; Frequency; Gallium arsenide; HEMTs; MESFET circuits; MESFET integrated circuits; MODFETs;
Journal_Title :
Electron Devices, IEEE Transactions on
