Quasi-two-dimensional MESFET simulations for CAD

Author

Snowden, Christopher M. ; Pantoja, Renato R.

Author_Institution

Dept. of Electr. & Electr. Eng., Leeds Univ., UK

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1564

Lastpage

1574

Abstract

A comprehensive quasi-two-dimensional simulation that has been applied to the design and modeling of submicrometer recessed-gate GaAs MESFETs is described. A detailed energy transport model using a fast and accurate algorithm is solved. The model accounts for avalanche breakdown and gate conduction. DC and microwave characteristics are obtained from the model. An accurate approach for simulating frequency-, amplitude-, and bias-dependent two-port RF parameters is described, and the results obtained are compared to measured data. The agreement between measured and predicted data is found to be excellent

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; digital simulation; electronic engineering computing; gallium arsenide; semiconductor device models; 2D simulation; DC characteristics; GaAs; MESFET simulations; avalanche breakdown; circuit CAD; energy transport model; gate conduction; microwave characteristics; model; quasi-two-dimensional simulation; recessed-gate; semiconductors; submicron gate MESFETs; two-port RF parameters; Avalanche breakdown; Computational modeling; Design automation; Equivalent circuits; Frequency; Gallium arsenide; MESFETs; Numerical simulation; Semiconductor process modeling; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34213

Filename

34213