Abstract :
GaInAs was grown by atmospheric-pressure MOVPE using tertiarybutylarsine in place of arsine. Its carbon content was low and its carrier density and mobility were 2*1015 cm-3 and 50500 cm2/Vs at 77 K, respectively, comparable with arsine-grown GaInAs. The composition of the GaInAs was, however, sensitive to growth temperature, pin diodes grown from tertiarybutylarsine were comparable with those grown from arsine, having dark currents <100 pA and capacitance about 0.30 pF.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; p-i-n diodes; photodiodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; 0.3 pF; 100 pA; GaInAs photodiodes; atmospheric-pressure MOVPE; capacitance; carrier density; dark currents; growth temperature; mobility; pin diodes; tertiarybutylarsine;
