Title :
A V-band, high gain, low noise, monolithic PHEMT amplifier mounted on a small hermetically sealed metal package
Author :
Itoh, Y. ; Horiie, Y. ; Nakahara, K. ; Yoshida, N. ; Katoh, T. ; Takagi, T.
Author_Institution :
Electro-Opt. & Microwave Syst. Lab., Mitsubishi Electr. Corp., Kanagawa, Japan
Abstract :
V-band, high gain, low noise, monolithic amplifiers based on 0.15-μm AlGaAs-InGaAs-GaAs pseudomorphic HEMT´s have been developed. The four-stage amplifier has been assembled on a small hermetically sealed metal package and has achieved a noise figure of 3 dB with a small signal gain of 42.2 dB at 51 GHz. The overall amplifier measured 14.2×20.0×2.3 mm3. The two-stage amplifier has been mounted on a carrier-type fixture and has achieved a noise figure of 2.5 dB with a small signal gain of 20.4 dB at 51.5 GHz. These results represent the best noise figure and the highest gain ever achieved by a monolithic amplifier using GaAs- or InP-based HEMT devices at these frequencies.
Keywords :
HEMT integrated circuits; MMIC amplifiers; field effect MIMIC; gallium arsenide; integrated circuit noise; integrated circuit packaging; millimetre wave amplifiers; 0.15 micron; 2.5 dB; 20.4 dB; 3 dB; 42.2 dB; 51 GHz; 51.1 GHz; AlGaAs-InGaAs-GaAs; EHF; LNA; MIMIC; MM-wave IC; V-band; carrier-type fixture; four-stage amplifier; hermetically sealed metal package; high gain; low noise operation; monolithic PHEMT amplifier; pseudomorphic HEMT; two-stage amplifier; Assembly; Fixtures; Frequency; Gain; HEMTs; Hermetic seals; Low-noise amplifiers; Noise figure; PHEMTs; Packaging;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
