• DocumentCode
    122022
  • Title

    Texturing low reflecting surface of random double inverted pyramids using N-fluoropyridinium salt

  • Author

    Kumada, Tatsuya ; Kawai, Kunihiro ; Hirano, Takuichi ; Otani, Makoto ; Nagai, Takayuki ; Adachi, Koichiro ; Arima, Kenta ; Morita, Minoru

  • Author_Institution
    Dept. of Precision Sci. & Technol., Osaka Univ., Suita, Japan
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    2234
  • Lastpage
    2237
  • Abstract
    Here we propose a texturing method for crystal Silicon solar cells, which enables a low reflecting surface of random double inverted pyramids easily. The surfaces of the reported crystal Silicon solar cells that have world-record efficiency were inverted pyramids, whereas the widely-used conventional texturing surface is a random pyramid surface by alkaline solution. Our method can realize a random double inverted pyramid surface of nanometer-sized inverted pyramids on micrometer-sized inverted pyramids without photo-lithography. This random double inverted pyramid surface is obtained by a kind of fluorinating agent of N-fluoropyridinium salt, under optical illuminating and heating condition. Using reflectance measurement with integrating sphere, we realized a black surface of 6.3% reflectance, whereas the as-slice surface is 23% and random pyramid surface is 11.9%.
  • Keywords
    elemental semiconductors; silicon; solar cells; surface texture; N-fluoropyridinium salt; Si; alkaline solution; as-slice surface; crystal silicon solar cells; fluorinating agent; heating condition; low reflecting surface texturing; micrometer-sized inverted pyramids; nanometer-sized inverted pyramids; optical illuminating condition; random double inverted pyramids; reflectance measurement; Etching; Heating; Optical reflection; Reflectivity; Silicon; Substrates; N-fluoropyridinium salt; etching salt; inverted pyramids; low reflectance; texturing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925369
  • Filename
    6925369