Theoretical study of the piezoelectric effect on GaAs MESFETs on (100), (011), and (111)Ga, and (111)As substrates

Author

Onodera, Tsukasa ; Nishi, Hidetoshi

Author_Institution

Fujitsu Ltd., Kawasaki, Japan

Volume

36

Issue

9

fYear

1989

fDate

9/1/1989 12:00:00 AM

Firstpage

1580

Lastpage

1585

Abstract

The influence of piezoelectric charge on GaAs MESFETs fabricated on (100), (011) and (111)Ga and (111)As substrates is discussed. A two-dimensional device simulation, including a piezoelectric charge model with an edge-force approximation, is used in this study. It is found that piezoelectric charge has very little influence on GaAs MESFETs fabricated on (011) substrates. Furthermore, the threshold voltage shift of MESFETs on (111)Ga has the opposite sign to those on a (111)As plane substrate. It is also found that orientation effects are much smaller for substrates other than the (100) substrate. This indicates the potential of orientation-effect free alignment of FETs in high-speed GaAs LSIs with (011) or (111) substrates

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; large scale integration; piezoelectric semiconductors; piezoelectricity; semiconductor device models; (011) substrates; (100) substrates; (111) substrates; GaAs; MESFETs; edge-force approximation; high-speed GaAs LSIs; influence of piezoelectric charge; orientation effects; orientation-effect free alignment of FETs; piezoelectric charge model; piezoelectric effect; semiconductors; substrate orientation; threshold voltage shift; two-dimensional device simulation; Dielectric substrates; Electric variables; Electrodes; Fingers; Gallium arsenide; Helium; MESFETs; Piezoelectric effect; Stress; Threshold voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.34215

Filename

34215