Title :
Theoretical study of the piezoelectric effect on GaAs MESFETs on (100), (011), and (111)Ga, and (111)As substrates
Author :
Onodera, Tsukasa ; Nishi, Hidetoshi
Author_Institution :
Fujitsu Ltd., Kawasaki, Japan
fDate :
9/1/1989 12:00:00 AM
Abstract :
The influence of piezoelectric charge on GaAs MESFETs fabricated on (100), (011) and (111)Ga and (111)As substrates is discussed. A two-dimensional device simulation, including a piezoelectric charge model with an edge-force approximation, is used in this study. It is found that piezoelectric charge has very little influence on GaAs MESFETs fabricated on (011) substrates. Furthermore, the threshold voltage shift of MESFETs on (111)Ga has the opposite sign to those on a (111)As plane substrate. It is also found that orientation effects are much smaller for substrates other than the (100) substrate. This indicates the potential of orientation-effect free alignment of FETs in high-speed GaAs LSIs with (011) or (111) substrates
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; large scale integration; piezoelectric semiconductors; piezoelectricity; semiconductor device models; (011) substrates; (100) substrates; (111) substrates; GaAs; MESFETs; edge-force approximation; high-speed GaAs LSIs; influence of piezoelectric charge; orientation effects; orientation-effect free alignment of FETs; piezoelectric charge model; piezoelectric effect; semiconductors; substrate orientation; threshold voltage shift; two-dimensional device simulation; Dielectric substrates; Electric variables; Electrodes; Fingers; Gallium arsenide; Helium; MESFETs; Piezoelectric effect; Stress; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
