• DocumentCode
    1220285
  • Title

    Laser-assisted deposition of BN films on InP for MIS applications

  • Author

    Paul, T.K. ; Bhattacharya, P. ; Bose, D.N.

  • Author_Institution
    Indian Inst. of Technol., Kharagpur, India
  • Volume
    25
  • Issue
    23
  • fYear
    1989
  • Firstpage
    1602
  • Lastpage
    1603
  • Abstract
    Thin films of boron nitride (500-1000 AA) were deposited on InP using a Q-switched ruby laser. Films were found to have a dielectric constant of 3.28, resistivity of 5*1011 Omega cm and bandgap of 4.1 eV. The minimum interface state density for the Al/BN/InP system was 6.2*1010 cm-2 eV-1, 0.5 below the conduction band.
  • Keywords
    III-V semiconductors; boron compounds; dielectric thin films; indium compounds; laser beam applications; metal-insulator-semiconductor structures; semiconductor-insulator boundaries; solid lasers; 4.1 eV; 500 Gohmcm; 500 to 1000 A; Al-BN-InP; Al 2O 3:Cr laser; Q-switched laser; bandgap; dielectric constant; gate insulators; interface state density; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19891075
  • Filename
    138819
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1220285