Title :
Proof of down-conversion by CdSe/ZnS quantum dots on silicon solar cells
Author :
Sadeghimakki, Bahareh ; Zhen Gao ; Sivoththaman, Siva
Author_Institution :
Electr. & Comput. Eng. Dept., Centre for Adv. Photovoltaic Devices & Syst., Waterloo, ON, Canada
Abstract :
The performance of the crystalline silicon solar cells can be improved with spectrally engineered layers. Core/shell CdSe/ZnS quantum dots (QDs) with tunable absorption-emission wavelengths in UV-Vis range can be applied as luminescence centers in luminescence down-conversion layers (LDC). In this work, CdSe/ZnS QDs with an emission wavelength of 620nm and luminescence quantum efficiency (LQE) of 85% were deployed on planar and textured crystalline silicon solar cells for down-conversion. The structural and optical characteristics of the QDs and the employed layer were studied. The cell performances before and after LDC layer deployment were investigated. Experimental verification was obtained on luminescence down-conversion of the incident photons in the cells containing LDC layers.
Keywords :
II-VI semiconductors; cadmium compounds; elemental semiconductors; selenium compounds; semiconductor quantum dots; silicon; solar cells; sulphur compounds; zinc compounds; CdSe-ZnS; LDC layer deployment; Si; UV-vis range; cell performances; crystalline silicon solar cells; emission wavelength; incident photons; luminescence down-conversion layers; luminescence quantum efficiency; planar crystalline silicon solar cells; quantum dots; silicon solar cells; textured crystalline silicon solar cells; tunable absorption-emission wavelengths; wavelength 620 nm; Absorption; Image resolution; Lattices; Luminescence; Optical imaging; Photovoltaic cells; Quantum dots; CdSe/ZnS quantum dots; down-conversion; photoluminescence; silicon solar cells;
Conference_Titel :
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location :
Denver, CO
DOI :
10.1109/PVSC.2014.6925376
