BH lasers with GaInAsP and GaInAs active layers grown by MOVPE using tertiarybutylarsine and tertiarybutylphosphine

BH lasers were grown by atmospheric-pressure MOVPE using either PH₃ and AsH₃ or t-BuPH₂ and t-BuAsH₂ to produce the active lasing layer. Quaternary ( lambda =1.5 mu m) devices grown from the organic sources approach the quality of hydride-grown devices, with threshold currents of 20 mA and output powers of 6 mW. The performance is probably limited by impurities in the t-BuPH₂ since GaInAs lasers grown from t-BuAsH₂ were identical in performance to GaInAs lasers grown from AsH₃. When growing GaInAsP from the organic sources the incorporation of arsenic into the solid phase was nonlinear: similar to that reported for the hydrides.