DocumentCode
122041
Title
CdTe single-crystal heterojunction photovoltaic cells
Author
Duenow, Joel N. ; Burst, James M. ; Albin, D.S. ; Kuciauskas, Darius ; Johnston, Steven W. ; Reedy, Robert C. ; Duda, A. ; DeHart, Clay M. ; Metzger, Wyatt K.
Author_Institution
Nat. Renewable Energy Lab., Golden, CO, USA
fYear
2014
fDate
8-13 June 2014
Firstpage
2310
Lastpage
2313
Abstract
Most recent gains in CdTe photovoltaic (PV) device efficiency have been in short-circuit current density (Jsc) and fill factor (FF), rather than open-circuit voltage (Voc). Because Jsc is nearing its theoretical limit, further improvements in device efficiency will require increasing Voc beyond 860 mV and increasing FF. Voc and FF may be improved by increasing both the carrier concentration and minority-carrier lifetime of the CdTe. However, Voc may be limited for other reasons, including Fermi-level pinning and surface recombination. In this study, we used doped CdTe single crystals to test whether higher carrier concentration and lifetime can overcome traditional Voc barriers. In our work to date, we have fabricated heterojunction CdTe PV cells with Voc up to 929 mV, FF of ~60%, and efficiencies of 10%.
Keywords
Fermi level; cadmium compounds; carrier density; current density; minority carriers; photovoltaic cells; short-circuit currents; solar cells; surface recombination; CdTe; FF; Fermi-level pinning; PV device efficiency; carrier concentration; efficiency 10 percent; fill factor; minority-carrier lifetime; short-circuit current density; single-crystal heterojunction photovoltaic cells; surface recombination; Films; Gold; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Surface treatment; II–VI semiconductor materials; cadmium compounds; current-voltage characteristics; heterojunctions; photovoltaic cells; solar energy;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
Conference_Location
Denver, CO
Type
conf
DOI
10.1109/PVSC.2014.6925388
Filename
6925388
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