• DocumentCode
    122041
  • Title

    CdTe single-crystal heterojunction photovoltaic cells

  • Author

    Duenow, Joel N. ; Burst, James M. ; Albin, D.S. ; Kuciauskas, Darius ; Johnston, Steven W. ; Reedy, Robert C. ; Duda, A. ; DeHart, Clay M. ; Metzger, Wyatt K.

  • Author_Institution
    Nat. Renewable Energy Lab., Golden, CO, USA
  • fYear
    2014
  • fDate
    8-13 June 2014
  • Firstpage
    2310
  • Lastpage
    2313
  • Abstract
    Most recent gains in CdTe photovoltaic (PV) device efficiency have been in short-circuit current density (Jsc) and fill factor (FF), rather than open-circuit voltage (Voc). Because Jsc is nearing its theoretical limit, further improvements in device efficiency will require increasing Voc beyond 860 mV and increasing FF. Voc and FF may be improved by increasing both the carrier concentration and minority-carrier lifetime of the CdTe. However, Voc may be limited for other reasons, including Fermi-level pinning and surface recombination. In this study, we used doped CdTe single crystals to test whether higher carrier concentration and lifetime can overcome traditional Voc barriers. In our work to date, we have fabricated heterojunction CdTe PV cells with Voc up to 929 mV, FF of ~60%, and efficiencies of 10%.
  • Keywords
    Fermi level; cadmium compounds; carrier density; current density; minority carriers; photovoltaic cells; short-circuit currents; solar cells; surface recombination; CdTe; FF; Fermi-level pinning; PV device efficiency; carrier concentration; efficiency 10 percent; fill factor; minority-carrier lifetime; short-circuit current density; single-crystal heterojunction photovoltaic cells; surface recombination; Films; Gold; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Surface treatment; II–VI semiconductor materials; cadmium compounds; current-voltage characteristics; heterojunctions; photovoltaic cells; solar energy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th
  • Conference_Location
    Denver, CO
  • Type

    conf

  • DOI
    10.1109/PVSC.2014.6925388
  • Filename
    6925388