Observation of nonbiased degradation recovery in GaInAsP/InP laser diodes

Author

Yoon, S.F.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ.

Volume

10

Issue

2

fYear

1992

fDate

2/1/1992 12:00:00 AM

Firstpage

194

Lastpage

198

Abstract

Conventional accelerated lifetests of laser diodes generally involve operating the devices continuously at either constant drive current or power output with periodic recording of their characteristics. In this work, a new observation of degradation recovery from a noncontinuous lifetest performed on 1.3-μm GaInAsP/InP double-heterostructure (DH) laser diodes of the inverted-rib structure is reported. This nonconventional lifetest method involves constant 5-mW/facet biasing at 50°C followed by a period of no bias at room temperature. On average, the threshold current and current for 5-mW/facet output reduced by 6.7 and 8.4%, respectively, during the unbiased period. Redistribution of mobile defects in the cladding layer is postulated to be the mechanism responsible for the degradation recovery

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; life testing; optical testing; semiconductor device testing; semiconductor junction lasers; 1.3 micron; 5 mW; 50 degC; GaInAsP-InP; IR; accelerated lifetests; cladding layer; constant drive current; double-heterostructure; facet biasing; inverted-rib structure; laser diodes; mobile defects; no bias; nonbiased degradation recovery; noncontinuous lifetest; periodic recording; power output; room temperature; semiconductors; threshold current; unbiased period; Acceleration; DH-HEMTs; Degradation; Diode lasers; High speed optical techniques; Indium phosphide; Optical attenuators; Substrates; Temperature; Threshold current;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.120574

Filename

120574